All submissions of the EM system will be redirected to Online Manuscript Submission System. Authors are requested to submit articles directly to Online Manuscript Submission System of respective journal.


Electrical properties ofAu /n -Si,Au/n-GaAs,Au/n-InPschottky diodes

Author(s): R.K.Singh

The schottky barrier diode fabricated by vaccum deposition ofAu on n-Si (bulk), n-GaAS (L.P.E,), & n-InP (bulk) have been studied for their device performance bymeans of I-V&C-Vmeasurements.Aluminumwas used to make ohmic contacts on n-Si&Gold Indiumalloywas used tomake ohmic contacts on n-GaAs&InP. Electrical properties such as donar concentration Nd, barrier high (ÖB), Depletion width (W) have been calculated. In Particular, method of improving the performance ofAu/n-InP had been discussed & its ideality factor (ç) was reported.

Share this       

Table of Contents

Recommended Conferences

izmir escort izmir escort bursa escort antalya escort izmir escort porno porno izle türk porno eskişehir escort bartın escort burdur escort havalandırma izmir escort bursa escort porno indir izle escort izmir