Detecting Topography of WO3 Semiconductor by Atomic Force Microscope (AFM) and Scanning Tunneling Microscope (STM)

Author(s): Anwar QA

The morphology of WO3 is studied by AFM microscopy in order to specify the roughness which usually controls the movement of a free electron between the different layers which is fabricated the sensor. Additionally, STM microscopy gives the electrical characteristics of the sample by (STS) in a nanoscopic scale. As well as the electronic cloud which located in the middle distance between atoms and resulted by insertion of their electrons.

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