We introduce an approach to increase density of field effect heterotransistors, which include into itself circuits NAND and AND. The approach based on manufacturing a specific configuration of a heterostructure. After the manufacturing, we consider doping of several areas of the heterostructure by diffusion or ion implantation. After the doping, we consider optimized annealing of dopants and generated radiation defects during ion implantation. We consider redistribution of dopant and radiation defects under influence of mismatch induced stress. Some comparison of calculated results with experimental one has been done.