Synthesis and characterization of nanocrystalline Zinc Selenide thin films prepared by chemical bath deposition method

Author(s): Salah Abdul-Jabbar Jassim

Zinc selenide (ZnSe) thin films have been deposited using chemical bath deposition method (CBD) on glass substrate at 70oC. The deposition parameter of ZnSe thin filmis interpreted in the present investigation. The as-deposited films were annealed in air for 1h. The prepared films were characterization byX- ray diffraction (XRD), UV-vis spectroscopy and dcelectrical measurements. XRD study revealed that the ZnSe thin films are polycrystalline in nature and have a cubic (zinc blend) structure. The structural parameters such as particle size (D), strain (å) and dislocation density (ä) values in the films were calculated. The average grain size is in the range of (10-30 nm). The values of optical direct energy gap Eg have been determined fromthe absorption spectra. The energy gaps of the films were found to lie in the range between (2.72- 2.82 eV).Temperature resistivity measured in the range (300-560 K) showed a change in conduction mechanismat (350 K). The roomtemperature electrical resistivity is in the order of 106Ù.cm. Thus prepared ZnSe thin films can be used as a window layer in solar cells due itswide direct band gap and high electrical resistivity properties.

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