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Two-dimensional (2D) iota slim layers have pulled in noteworthy consideration after the revelation of crude manufacture strategy for graphene (i.e., mechanical shedding of graphite utilizing scotch tapes). As a van-deer Waals building, different iota slim layers and those hybridization are as of late contemplated. In the discussion, first, I present attraction and spintronics emerging from edges of 2D particle slight layers (e.g., graphene, few-layer dark phosphorus (BP), hexagonal boron-nitride (hBN), and molybdenum disulfide (MoS2)). I make nanomesh (NM) structures, comprising of honeycomb like cluster of hexagonal nano-pores, with determined poreedge nuclear structure (i.e., crisscross sort) on singular layers. Strikingly, hydrogen-ended graphene NM (H-GNM) shows level band ferromagnetism, while it vanishes in oxygen-ended GNM (O-GNM). Then again, O-BPNM displays huge ferromagnetism (multiple times) because of ferromagnetic turn coupling of edge O-P bonds, while it is dispensed with in H-BPNM. O-hBNNM likewise shows huge ferromagnetism because of edge O-B and O-N bonds, while it vanishes in H-hBNNM. These are additionally profoundly delicate to toughening temperatures to shape crisscross pore edge. These open an extensive road for acknowledging 2D iota dainty adaptable attractive and spintronic gadgets, manufactured without utilizing uncommon earth attractive molecules. Second, I show making of the world-most slender Schottky intersection on few-layer MoS2, one of the change metal dichalcogenides. The 2H-period of MoS2 has direct band holes of 1.5−1.8 eV. It is exhibited that electron-pillar (EB) light to the 2H-stage causes semiconductor-metal change to 1T-stage and molecularly meager Schottky intersection with hindrance tallness of 0.13−0.18 eV is made at the interface of 2H/1T districts. These discoveries likewise show a likelihood that the powerful boundary stature is exceptionally touchy to electrostatic charge doping and practically liberated from Fermi-level sticking while accepting prevalence of the thermionic current commitment. This EB top-down designing opens the likelihood to create in-plane parallel heterostructure FETs, which have demonstrated promising scaling possibilities in the nanometer run, and additionally neighborhood interconnects straightforwardly with metallic stage (1T) between (2H)MoS2 transistors, bringing about extreme adaptable and wearable in-plane incorporation circuits without utilizing 3D metal wirings. At long last, I will likewise quickly discuss presentation of turn circle connection into graphene by nano-molecule enhancement. 

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