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Abstract

Observation of flicker 1/f noise in YBa2Cu3O7 and GaAlAs diode

Author(s): S.B.Ota, Smita Ota

Polycrystalline YBa2Cu3O7-x near TC (70-95 K) and GaAlAs semiconductor diode in the temperature range 50-300 K has been studied. The measured dc voltages in these systems show fluctuations and the standard deviations of the voltage values show the statistics of flicker 1/f noise. In YBa2Cu3O7-x the measured dc voltages showed increased noise near TC which is possibly related to the 1/f noise due to the motion of vortex lattice. The 1/f noise in GaAlAS diode is found to be temperature independent but current dependent. It is found to increase with decrease in forward current below 0.01 mA.


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