Abstract

Calibration of cryogenic Si diode for temperatures between 30-210 K

Author(s): S.B.Ota

The variation of forward voltage with temperature of a cryogenic silicon diode of CRYO Industries of America Inc. Model No. DT-470-SD-13 is measured in the temperature range 30-210 K and for current values between 10 nA and 200 A. The characteristic is least squres fitten by a 1st order polynomial and the coefficients are given. The least squares fitting has high temperature root between 420 K and 625 K.


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