Calibration of cryogenic Si diode for temperatures between 30-210 KAuthor(s): S.B.Ota
The variation of forward voltage with temperature of a cryogenic silicon diode of CRYO Industries of America Inc. Model No. DT-470-SD-13 is measured in the temperature range 30-210 K and for current values between 10 nA and 200 ïA. The characteristic is least squres fitten by a 1st order polynomial and the coefficients are given. The least squares fitting has high temperature root between 420 K and 625 K.