In this paper we introduce an approach to manufacture field-effect heterotransistors with several channel. The approach based on manufacturing of a heterostructure with required configuration, doping by diffusion or ion implantation of required areas of the heterostructure and optimization of annealing of dopant and/or radiation defects. We consider the optimization framework recently introduced approach. At the same time we introduce an analytical approach for analysis of redistribution of dopant and radiation defects. The approach gives us possibility to formulate recommendations for optimization of annealing of dopant and/or radiation defects.