Abstract

On optimization of manufacturing of a multi-level invertor to increase density of elements

Author(s): E.L.Pankratov, E.A.Bulaeva

In this paper we introduce an approach to increase integration rate of elements in a three level invertor. The approach based on decreasing of dimension of elements of the invertor (diodes and bipolar transistors) due to manufacturing of these elements by diffusion or ion implantation in a heterostructure with specific configuration and optimization of annealing of dopant and radiation defects.


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