Copper (Cu) doped ZnS thin films were prepared bymeans of electrodeposition method on conducting substrate at applied constant deposition potential. The deposition potential of ZnS and Cu doped ZnS thin films were obtained by cyclic voltammetry (CV). The prepared filmswere characterized by X-ray diffraction (XRD) study, Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, UV-Vis absorption spectroscopy and contact angle measurements. XRD study reveals that the electrodeposited 3 % of Cu doped ZnS thin films are polycrystalline in nature. The SEMimages showmicro-chip likemicrostructurewith uniformdepsoition of Cu doped ZnS grains. The semiconducting property of Cu doped ZnS thin filmwas confirmed fromthe UV-Vis absorption study having band gap energy 4.1 eV. The maximumvalue of contact angle was found to be 25° for the 3% Cu doped ZnS thin films, which confirms the hydrophilic nature of the Cu doped ZnS.